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Energy band gap Eg of InxGa1-xAs alloys

Contents  
   
 
Equation  
 

The energy band gap of InxGa1-xAs alloys depends on the aluminum content x, but it is direct for all values of x between 0 and 1.
At room temperature (300 K) the dependency of the energy gap on the indium content x can be calculated using an equation given by R.E. Nahory et al in Appl. Phys. Lett. 33 (1978) p. 659

 
 
  Eg(x) = 1.425 eV - x 1.501 eV + x2 0.436 eV eq.(1)  
 
  In this equation the symbols have the following meaning: down
 
  Eg(x) direct energy band gap of InxGa1-xAs  
  x indium fraction of the InxGa1-xAs alloy  
 
Numerical values  
 
  calculator calculator for Eg(x)   (uses javascript)  
 
 

Band gap Eg(x) and gap wavelength λg of InxGa1-x As alloys at 300 K calculated with equation (1).

 
 
 
x Eg(x)
(eV)
λg
(nm)
Graph Eg(x)
0 1.425 870
0.05 1.351 918
0.10 1.279 970
0.15 1.210 1025
0.20 1.142 1086
0.25 1.077 1151
0.30 1.014 1223
0.35 0.953 1301
0.40 0.894 1386
0.45 0.838 1480
0.50 0.784 1583
0.55 0.731 1696
0.60 0.681 1820
0.65 0.634 1957
0.70 0.588 2110
0.75 0.544 2278
0.80 0.503 2465
0.85 0.464 2672
0.90 0.427 2903
0.95 0.393 3159
1.00 0.360 3444
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